Magazine for semiconductor device

ABSTRACT

A magazine  12  for storing a plurality of packaged semiconductor integrated circuit devices  10 , such as BGA packages, having connection terminals  1  located on a lower surface of the package, includes an elongated housing  9  having a pair of opposite end open mouths fitted with a rubber stopper or a bottle stopper. The housing includes a horizontal bottom plate  6 , a pair of first side plates  4  extending from opposite edges of the horizontal bottom plate  6  in an inclined upward direction, a pair of second side plates  5  extending vertically upward from an upper edge of the pair of first side plates  4 , respectively, and a horizontal upper plate  7  bridging an upper edge of the pair of second side plates  5 . The pair of first side plates  4  have an inclined angle α which is necessary and sufficient to ensure that the connection terminals  1  of the semiconductor device  10  never contact with the first side plate  4  and the bottom plate  6  when the semiconductor device  10  is stored in the housing  9.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a semiconductor device magazinefor storing in an aligned condition a plurality of packagedsemiconductor integrated circuit devices having connection terminalslocated on a lower surface of the package, as typified by a BGA (ballgrid array) package, a PGA (pin grid array) package, and a LGA (landgrid array) package. In this specification, the packaged semiconductorintegrated circuit device will be simply called a semiconductor device.

[0002] A package shape for the semiconductor device includes variousshapes. For example, FIG. 6A illustrates a sectional shape of a BGAsemiconductor device 100 a of a small individual mold type, and FIG. 6Billustrates a sectional shape of a BGA semiconductor device 100 of afull-wafer-encapsulated and cut-off type. FIG. 6C illustrates a bottomview of the semiconductor devices shown in FIGS. 6A and 6B. As shown inFIGS. 6A, 6B and 6C, the package shape for the semiconductor deviceincludes the small individual mold type and the full-wafer-encapsulatedand cut-off type.

[0003] As shown in FIGS. 6A and 6C, the semiconductor device 100 a ofthe small individual mold type includes a mold resin 102 covering anupper surface of a substrate 103 and having a trapezoid sectional shape,and a number of connection terminals (balls) 101 arranged in the form ofa matrix on a lower surface of the substrate 103. On the other hand, asshown in FIGS. 6B and 6C, the semiconductor device 100 of thefull-wafer-encapsulated and cut-off type includes a mold resin 104covering an upper surface of a substrate 103 and having a rectangularsectional shape, so that a package is constituted of the substrate 103and the mold resin 104. This package has a rectangular sectional shape.A number of connection terminals (balls) 101 are arranged in the form ofa matrix on a lower surface of the substrate 103, similarly to the smallindividual mold type.

[0004] The above mentioned semiconductor devices 100 and 100 a have afeature that the number of connection terminals is greatly larger thanthat of a conventional QFP (quad flat package) and less electric noiseis generated.

[0005] Conventionally, the semiconductor devices of the BGA type, thePGA type and the LGA type are wrapped by use of a tray. However, at thepresent, since the size and the weight of the semiconductor devices havebecome decreased, if the tray is used, a mounting speed becomes slow.

[0006]FIG. 7A is a cross-sectional view illustrating a conventionalmagazine accommodating or storing therein the semiconductor devices ofthe small individual mold type, and FIG. 7B is a cross-sectional viewillustrating a conventional magazine accommodating or storing thereinthe semiconductor devices of the full-wafer-encapsulated and cut-offtype. These conventional magazines 100 and 100 a include a rectangularhousing 109 confined by an upper plate 107, a lower plate 106 and a pairof side plates 105. On an inside surface of each side plate 105, a pairof horizontally inward extending guiding rails 114 are formed separatelyfrom each other by an appreciable distance in a vertical direction, sothat a guiding groove 111 is defined by the pair of horizontally inwardextending guiding rails 114 on the inside surface of each side plate105. By inserting the substrate 103 of the semiconductor device 100 and100 a into a pair of grooves 111, the semiconductor device 100 and 100 ais positioned in the magazine in such a condition that the connectionterminals 101 are in no way in contact with the lower plate 106.

[0007] As mentioned above, the housing 109 of the conventional magazinehas a pair of grooves 111 provided on the pair of side plates 105 forreceiving the substrate 103 in order to prevent the connection terminals101 of the semiconductor device 100 and 100 a from being contacted withthe housing 109. With this arrangement, it is actually possible tosurely prevent the connection terminals 101 of the semiconductor device100 and 100 a from being contacted with the housing 109. However, themagazines become dedicated magazines for the specific limitedsemiconductor devices 100 and 100 a, respectively.

[0008] In the conventional magazine, in addition, the function of theguiding rails 114 is to support the semiconductor devices 100 and 100 aand to prevent the dislocation of the semiconductor devices 100 and 100a. However, when the width W of a peripheral clear zone of the lowersurface of the substrate 103 (FIG. 6C) is small, it is necessary toshorten the height (projection distance) of the guiding rails 114 inorder to avoid a contact between the connection terminals 101 and theguiding rails 114. In this condition, however, if the magazine isdeformed because of a shock attributable to a falling, there occurspossibility that the connection terminals 101 such as ball terminals orlead pins contact with the guiding rails 114 and/or the substrate 103falls from the guiding rails 114 thereby to become immobilized.Particularly, this problem becomes remarkable because the width W of theperipheral clear zone of the lower surface of the semiconductor devicehas become small with a recent microminiaturization of the semiconductordevice. Actually, the width W of the peripheral clear zone of the lowersurface of the semiconductor device has been reduced to 0.5 mm, so thatthe tolerance of a magazine molding becomes ±0.3 mm. Therefore, theheight of the guiding rails 114 must be on the order of 0.1 mm to 0.2mm. In this condition, a slight deformation of the magazine frequentlyresults in the falling of the semiconductor devices 100 and 100 a fromthe guiding rails 114.

BRIEF SUMMARY OF THE INVENTION

[0009] Accordingly, it is an object of the present invention to providea semiconductor device magazine which has overcome the above mentionedproblems of the prior art.

[0010] Another object of the present invention is to provide asemiconductor device magazine capable of surely storing semiconductordevices having connection terminals on a lower surface of the package,without possibility that the connection terminals become in contact withan inner surface of the magazine, regardless of the magnitude of thewidth W of the peripheral clear zone of the lower surface of thepackage.

[0011] Still another object of the present invention is to provide asemiconductor device magazine capable of surely storing semiconductordevices having connection terminals on a lower surface of the package,capable of preventing the falling of the semiconductor devices even ifthe magazine is deformed by for example a shock.

[0012] The above and other objects of the present invention are achievedin accordance with the present invention by a semiconductor devicemagazine for storing therein a semiconductor device having connectionterminals formed on a lower surface of the semiconductor device, thesemiconductor device magazine comprising a housing for storing thesemiconductor device therein, the housing having at least one pair ofinclined walls located to support the semiconductor device interposedbetween the one pair of inclined walls by the fact that opposite edgesof the lower surface of the semiconductor device are abutted against thepair of inclined walls, and in such a condition that the connectionterminals are in no contact with any internal wall surface of thehousing. Here, the semiconductor device having the connection terminalsformed on the lower surface of the semiconductor device can beexemplified by a BGA package, a PGA package and a LGA package.

[0013] As seen from the above, in the semiconductor device magazine inaccordance with the present invention, the housing has at least a pairof inclined walls which are located to support the semiconductor devicehaving the connection terminals formed on a lower surface of thesemiconductor device interposed between the pair of inclined walls bythe fact that the opposite edges of the lower surface of thesemiconductor device are abutted against the pair of inclined walls andin a condition that the connection terminals 1 are in no contact withany internal wall of the housing. Therefore, the semiconductor devicecan be stored in the semiconductor device magazine in accordance withthe present invention with no damage to the connection terminals of thesemiconductor device.

[0014] In addition, even if the semiconductor device magazine inaccordance with the present invention is deformed at some degree, sincethe semiconductor device is supported by the pair of inclined wallsdifferently from the prior art semiconductor device magazine in whicheach of a pair of opposite edges of the semiconductor device issupported between one pair of guiding rails, there is no possibilitythat the connection terminals are stained or damaged because ofvibration in the course of a transport and/or a falling from the guidingrail.

[0015] Furthermore, the semiconductor device magazine in accordance withthe present invention is very simple in construction in comparison withthe prior art semiconductor device magazine having the pair of guidingrails for supporting the edge of the semiconductor device, the cost forfabricating the magazine can be greatly reduced.

[0016] In one preferred embodiment of the semiconductor device magazine,the housing further includes a pair of vertical walls extendingvertically upward from an upper end of the one pair of inclined walls,respectively, the pair of vertical walls being separated from each otherby such a distance ensuring that when one end of the semiconductordevice becomes in contact with one of the pair of vertical walls, theconnection terminals are in no contact with any internal wall surface ofthe housing.

[0017] Furthermore, the housing preferably includes a first horizontalwall coupling between a lower end of the one pair of inclined walls anda second horizontal wall coupling between an upper end of the pair ofvertical walls, the first horizontal wall being separated from thesecond horizontal wall by such a distance ensuring that when thesemiconductor device becomes in contact with the first horizontal wall,the connection terminals are in no contact with any internal wallsurface of the housing.

[0018] In another preferred embodiment of the semiconductor devicemagazine, the housing includes a second pair of inclined walls which arerespectively located at positions corresponding to opposite ends of thesemiconductor device stored in the housing and which are respectivelyinclined in directions opposite to respective inclined directions of thefirst named one pair of inclined walls.

[0019] In this embodiment, at the respective positions corresponding tothe opposite ends of the semiconductor device stored in the housing, thesecond pair of inclined walls can be coupled directly to the first namedone pair of inclined walls, respectively. Alternatively, at therespective positions corresponding to the opposite ends of thesemiconductor device stored in the housing, the second pair of inclinedwalls are coupled to the first named one pair of inclined walls by apair of vertical walls, respectively.

[0020] Furthermore, the housing preferably includes a first horizontalwall coupling between a lower end of the first named one pair ofinclined walls and a second horizontal wall coupling between an upperend of the second pair of inclined walls.

[0021] Preferably, each of the inclined walls has an inclined angle notless than 45 degrees. In addition, the housing can be formed ofpolystrene or polyvinyl chloride.

[0022] The above and other objects, features and advantages of thepresent invention will be apparent from the following description ofpreferred embodiments of the invention with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0023]FIG. 1 is a diagrammatic cross-sectional view of a firstembodiment of the semiconductor device magazine in accordance with thepresent invention;

[0024]FIG. 2A is a diagrammatic cross-sectional view of thesemiconductor device magazine shown in FIG. 1, storing a BGA typesemiconductor device;

[0025]FIG. 2B is a diagrammatic perspective view of the semiconductordevice magazine shown in FIG. 1, storing the BGA type semiconductordevice;

[0026]FIG. 3A is a diagrammatic cross-sectional view of a secondembodiment of the semiconductor device magazine in accordance with thepresent invention, storing a BGA type semiconductor device;

[0027]FIG. 3B is a diagrammatic cross-sectional view of the secondembodiment of the semiconductor device magazine in accordance with thepresent invention, storing a BGA type semiconductor device having adifferent shape;

[0028]FIG. 3C is a diagrammatic cross-sectional view of the secondembodiment of the semiconductor device magazine in accordance with thepresent invention, storing the BGA type semiconductor device in adifferent storing mode;

[0029]FIG. 4A is a diagrammatic cross-sectional view of a thirdembodiment of the semiconductor device magazine in accordance with thepresent invention, storing a BGA type semiconductor device;

[0030]FIG. 4B is a diagrammatic cross-sectional view of the thirdembodiment of the semiconductor device magazine in accordance with thepresent invention, storing a BGA type semiconductor device having adifferent shape;

[0031]FIG. 4C is a diagrammatic cross-sectional view of the thirdembodiment of the semiconductor device magazine in accordance with thepresent invention, storing the BGA type semiconductor device in adifferent storing mode;

[0032]FIG. 5 is a diagrammatic cross-sectional view of a fourthembodiment of the semiconductor device magazine in accordance with thepresent invention, storing a BGA type semiconductor device;

[0033]FIG. 6A is a diagrammatic cross-sectional view of the conventionalsemiconductor device of the small individual mold type;

[0034]FIG. 6B is a diagrammatic cross-sectional view of the conventionalsemiconductor device of the full-wafer-encapsulated and cut-off type;

[0035]FIG. 6C is a bottom view of the semiconductor device shown inFIGS. 6A and 6B;

[0036]FIG. 7A is a diagrammatic cross-sectional view of the conventionalsemiconductor device magazine storing the semiconductor device of thesmall individual mold type; and

[0037]FIG. 7B is a diagrammatic cross-sectional view of the conventionalsemiconductor device magazine storing the semiconductor device of thefull-wafer-encapsulated and cut-off type.

DETAILED DESCRIPTION OF THE INVENTION

[0038] Now, embodiments of the semiconductor device magazine inaccordance with the present invention will be described with referenceto the drawings.

[0039] Referring to FIG. 1, there is shown a diagrammaticcross-sectional view of a first embodiment of the semiconductor devicemagazine in accordance with the present invention. FIG. 2A is adiagrammatic cross-sectional view of the semiconductor device magazineshown in FIG. 1, storing a BGA type semiconductor device. FIG. 2B is adiagrammatic perspective view of the semiconductor device magazine shownin FIG. 1, storing the BGA type semiconductor device.

[0040] The magazine of the first embodiment, generally designated by thereference number 12, includes an elongated housing 9 extending in onedirection having a pair of opposite open ends each confining a mouthwhich is fitted with and closed by a rubber stopper (not shown) or abottle stopper (not shown). By fitting the rubber stopper or the bottlestopper into the mouth of each end of the magazine 12, semiconductordevices 10 stored in the magazine 12 are prevented from dropping fromthe magazine 12.

[0041] The housing 9 includes a horizontal bottom plate 6 (horizontalwall), a pair of first side plates 4 (inclined side walls) extendingfrom opposite side edges of the horizontal bottom plate 6 in such aninclined upward direction so that a spacing between the pair of inclinedside plates 4 increases toward an upward direction, a pair of secondside plates 5 (vertical side walls) extending vertically upward from anupper edge of the pair of first side plates 4, respectively, and ahorizontal upper plate 7 (horizontal wall) bridging an upper edge of thepair of second side plates 5. The cross-sectional view of this housing 9is symmetry to a central vertical line.

[0042] The first side plate 4 is inclined to the adjacent second sideplate 5 with an inclined angle α which is necessary and sufficient toensure that connection terminals 1 of the semiconductor device 10 nevercontact with the first side plate 4 and the bottom plate 6 (any wallsurface) when the semiconductor device 10 is stored in the housing 9. Inaddition, the pair of second side plates 5 are separated from each otherby a distance necessary and sufficient to ensure that, even when eitherside end of the semiconductor device 10 is in contact with the secondside plate 5, the connection terminals 1 of the semiconductor device 10never contact with the first side plate 4 and the bottom plate 6 (theother wall surface). Furthermore, the bottom plate 6 and the upper plate7 are separated from each other by a distance necessary and sufficientto ensure that, even when the semiconductor device 10 contacts with theupper plate 7 in an inclined condition, the connection terminals 1 ofthe semiconductor device 10 never contact with the first side plate 4,the second side plate 5 and the bottom plate 6 (the other wall surface).

[0043] Thus, the housing 9 enclosed and confined by the bottom plate 6,the upper plate 7, the first side plates 4 and the second side plates 5,which satisfy the above condition, is formed, and a plurality ofsemiconductor devices 10 are stored in the housing 9, as shown in FIG.2B.

[0044] Namely, as shown in FIG. 2A, BGA type semiconductor devices 10are stored in the magazine 12 of the first embodiment. The semiconductordevices 10 as shown in FIG. 2A are formed by encapsulating an uppersurface of a wafer with resin, mounting terminals (balls) 1 on a lowersurface of a wafer (a lower surface of the substrate 3), and cutting outthe resin-encapsulated wafer into individual chips, and is called thefull-wafer-encapsulated and cut-off type semiconductor device, which isthe same as the prior art semiconductor device 100 shown in FIG. 6B.Namely, the semiconductor device 10 has a mold resin 2 of a rectangularsectional shape formed on an upper surface of the substrate 3 and anumber of connection terminals 1 arranged in the form of a matrix on alower surface of the substrate 3. The semiconductor devices 10 arestored in the housing 9 in such a condition that opposite edges of thelower surface of the substrate 3 of the semiconductor device 10 are incontact with the first side plates 4, as shown in FIG. 2A.

[0045] Furthermore, not only the BGA semiconductor devices 10 of thefull-wafer-encapsulated and cut-off type but also the BGA semiconductordevices 100 a of the small individual mold type as shown in FIG. 6A,which are formed by mounting terminals (balls) 1 on a lower surface of awafer (a lower surface of the substrate 3), cutting out the wafer intoindividual chips, and encapsulating each single chip with resin, can bestored in the magazine 12. The small individual mold type BGAsemiconductor device includes a mold resin of a trapezoid sectionalshape covering an upper surface of a substrate and a number ofconnection terminals arranged in the form of a matrix on a lower surfaceof the substrate, as shown in FIGS. 6A and 6C.

[0046] As mentioned above, in the magazine 12 of this first embodiment,since the first side plate 4 is inclined by the angle α, thesemiconductor device 10 is interposed between and supported by the pairof first side plates 4 by the fact that the opposite edges of the lowersurface of the semiconductor device 10 are abutted against the firstside plates 4, in a condition that the connection terminals 1 are in nocontact with the first side plates 4 and the bottom plate 6 (any wallsurface). Since only the opposite lower edges of the semiconductordevice 10 (namely, an apex of an angle when viewed in a cross-section)are abutted against the first side plates 4 as shown in FIG. 2A, acontact area between the semiconductor device 10 and the first sideplates 4 is very small, so that the semiconductor device 10 can besmoothly moved in the magazine 12 in a longitudinal direction (onedirection) of the magazine 12.

[0047] Furthermore, as mentioned above, the pair of second side plates 5are separated from each other by a distance necessary and sufficient toensure that, even when the semiconductor device 10 becomes in contactwith one of the second side plates 5, the connection terminals 1 of thesemiconductor device 10 never contact with the first side plate 4 andthe bottom plate 6 (the other wall surface). Therefore, when thesemiconductor device 10 is moved along the first side plate 4, since thesemiconductor device 10 is restrained by the pair of second side plates5, the semiconductor device 10 is prevented from greatly deviating froma center position

[0048] Moreover, also as mentioned above, the bottom plate 6 and theupper plate 7 are separated from each other by a distance necessary andsufficient to ensure that, when the semiconductor device 10 becomesinclined to the upper plate 7, the connection terminals 1 of thesemiconductor device 10 never contact with the first side plate 4, thesecond side plate 5 and the bottom plate 6. Therefore, the connectionterminals 1 of the semiconductor device 10 contact with none of thefirst side plate 4, the second side plate 5 and the bottom plate 6, byaction of a restriction based on the upper plate 7.

[0049] As seen from the above, in this embodiment of the semiconductordevice magazine in accordance with the present invention, since theguiding rails 14 provided in the prior art magazine are omitted, theredoes not occur such a situation that the semiconductor device 100 fallsfrom the groove 111, which had occurred because of a deform of themagazine in the prior art magazine.

[0050] Furthermore, the inclined angle α of the first side plate 4 ispreferred to be not less than 45 degrees. If the inclined angle α of thefirst side plate 4 is less than 45 degrees, when a force acts on themagazine 12 from a direction of an upper plate side of the semiconductordevices 10, there is a fear that the magazine 12 is deformed with theresult that the semiconductor device 100 becomes immobilized between thepair of first side plates 4. In addition, in the case that the inclinedangle α of the first side plate 4 is less than 45 degrees, when atemperature elevates and the magazine 12 expands in a horizontaldirection so that the distance between the pair of first side plates 4becomes large and the semiconductor device 10 falls toward the bottomplate, and thereafter, when the magazine shrinks, the semiconductordevice 10 cannot displace or return toward the upper plate 7 because thesemiconductor device 100 becomes immobilized between the pair of firstside plates 4.

[0051] In the embodiment of the semiconductor device magazine, even ifthe connection terminals 1 are located to a position near to aperipheral edge of the lower surface of the semiconductor device withthe result that the width W of the peripheral clear zone of the lowersurface of the semiconductor device is small, since the first sideplates 1 are located with the inclined angle α, the semiconductor device10 can be stored in the housing 9 with no contact between the connectionterminals 1 and the first side plates 4 and the bottom plate 6.Therefore, it is possible to prevent contact between the connectionterminals 1 such as ball terminals and the side plates 4 and the bottomplate 6. Accordingly, when the semiconductor devices 10 are stored inthe magazine 12 in accordance with the present invention and themagazine 12 is transported, it is possible to prevent a damage and adeform caused by a contact to the connection terminals 1 such as theball terminals and a contamination in the connection terminals 1 such asthe ball terminals.

[0052] Moreover, since the semiconductor device magazine of thisembodiment is simplified in construction in comparison with the priorart semiconductor device magazine, it is possible to reduce the cost fora die used for molding the magazine 12. In addition, since the prior artmagazine has the guiding rails 114, the prior art magazine is formed ofan expensive material such as polycarbonate and polyethyleneterephtalate having an excellent moldability. However, according to thepresent invention, since the structure of the magazine 12 is greatlysimplified, the magazine 12 can be formed of an inexpensive materialsuch as polystrene (PS) and polyvinyl chloride (PVC). Therefore, thecost for fabricating the magazine 12 can be reduced.

[0053] Now, a second embodiment of the semiconductor device magazine inaccordance with the present invention will be described. FIG. 3A is adiagrammatic cross-sectional view of the second embodiment of thesemiconductor device magazine in accordance with the present invention,storing the BGA type semiconductor device 10. FIG. 3B is a diagrammaticcross-sectional view of the second embodiment of the semiconductordevice magazine in accordance with the present invention, storing a BGAtype semiconductor device of a different shape in a first storing mode.FIG. 3C is a diagrammatic cross-sectional view of the second embodimentof the semiconductor device magazine in accordance with the presentinvention, storing the BGA type semiconductor device of the differentshape in a second storing mode. In FIGS. 3A, 3B and 3C, elementscorresponding to those shown in FIGS. 1, 2A and 2B are given the samereference numbers, and explanation will be omitted.

[0054] The magazine of this second embodiment, generally designated bythe reference number 12A, is different from the first embodiment in thefollowing points: The horizontal bottom plate 6 (horizontal wall) and ahorizontal upper plate 7 a (horizontal wall) have the same width in ahorizontal width direction. The pair of second side plates 5 (verticalside walls) are positioned at a position apart outward from oppositeside ends of each of the bottom plate 6 and the upper plate 7 a. A pairof third side plates 8 (second inclined side walls) are provided tobridge an upper edge of the pair of second side plates 5 and oppositeside ends of the upper plate 7 a.

[0055] The second embodiment is the same as the first embodiment in theother point: Namely, a pair of first side plates 4 (inclined side walls)are provided to bridge a lower edge of the pair of second side plates 5and opposite side ends of the bottom plate 6.

[0056] Therefore, a lower end of the pair of first side plates 4 arecoupled to the lower plate 6. An upper end of the pair of third sideplates 8 are coupled to the upper plate 7 a. The first side plates 4 andthe pair of third side plates 8 are coupled by the pair of second sideplates 5.

[0057] At each side end of the semiconductor device 10, the first sideplate 4 and the corresponding third side plate 8 of the housing 9A areinclined opposite to each other. Each third side plate 8 is inclined tothe adjacent second side plate 5 with an inclined angle β which isnecessary and sufficient to ensure that when the semiconductor device 10of the full-wafer-encapsulated and cut-off type is stored in the housing9A in such a condition that the connection terminals 1 are directedtoward the third side plates 8, the connection terminals 1 of thesemiconductor device 10 never contact with the third side plates 8 andthe upper plate 7 a (any wall surface). This inclined angle β is anangle of the third side plate 8 to the second side plate 5, as shown inFIGS. 3A-3C. In this embodiment, the inclined angle β is preferred to benot less than 45 degrees, for the same reason as that for the angle ofthe first side plate 4 to the second side plate 5.

[0058] In this embodiment, as mentioned above, the first side plate 4 isformed with the inclined angle α at a lower portion of the magazine 12A,and the third side plate 8 is formed with the inclined angle β at anupper portion of the magazine 12A, and further, the second side plates 5are formed to bridge the first side plates 4 and the third side plates8. Therefore, the semiconductor device 10 is abutted against the thirdside plates 8, similar to the first side plate 4. Namely, if themagazine 12A is reversed or turned and if the semiconductor device 10 isinserted into the magazine 12A in a condition that the connectionterminals 1 are directed downward, the semiconductor device 10 isinterposed between and supported by the pair of third side plates 8 bythe fact that opposite edges of the lower surface of the semiconductordevice 10 are abutted against the third side plates 8, in a conditionthat the connection terminals 1 are in no contact with the third sideplates 8 and the upper plate 7 a. At this time, since a contact areabetween the semiconductor device 10 and the magazine 12A is very small,the semiconductor device 10 can be smoothly moved in the magazine 12A ina longitudinal direction (one direction) of the magazine 12A.

[0059] In addition, as shown in FIGS. 3B and 3C, the semiconductordevice 10 a of the small individual mold type can be stored in themagazine 12A. In this case, the semiconductor device 10 a is stored inthe magazine 12A either in a first storing mode in which the connectionterminals 1 are directed toward the bottom plate 6 or in a secondstoring mode in which the connection terminals 1 are directed toward theupper plate 7 a. Accordingly, the semiconductor devices 10 and 10 a canbe stored either in a first direction in which the connection terminals1 are directed toward the first side plates 4 or in a second directionin which the connection terminals 1 are directed toward the second sideplates 8. In addition, when the semiconductor devices 10 and 10 a arestored into the magazine 12A and then transported together with themagazine 12A, if the magazine 12A is revered or turned, thesemiconductor devices 10 and 10 a can be inserted into the magazine 12Aby inverting the direction of the connection terminals. At this time,since the connection terminals 1 do not contact anywhere within themagazine 12A, the semiconductor devices 10 and 10 a can be transportedwith no damage. In addition, when the semiconductor devices 10 and 10 aare inserted into the magazine 12A, since the direction of the upperside and the lower side is not limited, the working for inserting thesemiconductor device into the magazine becomes easy and thereforeworkability is elevated.

[0060] In this embodiment, the inclined angle α of the first side plates4 and the inclined angle β of the third side plates 8 are determined bythe height of the semiconductor devices 10 and 10 a stored in themagazine 12A and the width W of a peripheral clear zone of the lowersurface of the semiconductor devices 10 and 10 a. Therefore, by makingthe inclined angle α of the first side plates 4 and the inclined angle βof the third side plates 8 different from each other, two kinds ofsemiconductor devices 10 and 10 a can be stored in a common magazine12A. In this case, it is possible to reduce the cost for a die used formolding the magazine 12A. In addition, a wrapping source can be utilizedin common to different kinds of semiconductor devices. Furthermore, itis possible to reduce the number of stock management steps for themagazines.

[0061] Next, a third embodiment of the semiconductor device magazine inaccordance with the present invention will be described. FIG. 4A is adiagrammatic cross-sectional view of the third embodiment of thesemiconductor device magazine in accordance with the present invention,storing a BGA type semiconductor device of the small individual moldtype. FIG. 4B is a diagrammatic cross-sectional view of the thirdembodiment of the semiconductor device magazine in accordance with thepresent invention, storing a BGA type semiconductor device of thefull-wafer-encapsulated and cut-off type in a first storing mode. FIG.4C is a diagrammatic cross-sectional view of the third embodiment of thesemiconductor device magazine in accordance with the present invention,storing the BGA type semiconductor device of the full-wafer-encapsulatedand cut-off type in a second storing mode. In FIGS. 4A, 4B and 4C,elements corresponding to those shown in FIGS. 3A, 3B and 3C are giventhe same reference numbers, and explanation will be omitted.

[0062] The magazine of this third embodiment, generally designated bythe reference number 12B, is different from the second embodiment onlyin that the second side plates 5 (vertical wall) are not provided, andthe first side plates 4 (inclined wall) are coupled directly to thethird side plates 8 (other inclined wall) at opposite end sides of thesemiconductor devices stored in a housing 9B. In the other points, thethird embodiment is the same as the second embodiment. For example, thesemiconductor device 10 a of the small individual mold type is stored inthe magazine 12B, as shown in FIG. 4A.

[0063] In this embodiment, the spacing in a vertical direction betweenthe first side plate 4 and the adjoining third side plate 8 decreasestoward a joining point between the first side plate 4 and the adjoiningthird side plate 8. Therefore, when the semiconductor device 10 a ismoved along the first side plate 4, the deviation of the semiconductordevice 10 a is restrained by the first side plates 4 and the third sideplates 8, with the result that the dislocation of the semiconductordevice 10 a is prevented. Namely, an advantage similar to that obtainedin the first and second embodiments can be obtained.

[0064] In addition, as shown in FIGS. 4B and 4C, the semiconductordevice 10 of the full-wafer-encapsulated and cut-off type can be storedin the magazine 12B. In this case, the semiconductor device 10 is storedin the magazine 12B either in a first storing mode in which theconnection terminals 1 are directed toward the bottom plate 6 or in asecond storing mode in which the connection terminals 1 are directedtoward the upper plate 7 a. In addition, by making the inclined angle αof the first side plates 4 and the inclined angle β of the third sideplates 8 different from each other, two kinds of semiconductor devices10 and 10 a can be stored in a common magazine 12B.

[0065] Then, a fourth embodiment of the semiconductor device magazine inaccordance with the present invention will be described. FIG. 5 is adiagrammatic cross-sectional view of the fourth embodiment of thesemiconductor device magazine in accordance with the present invention,storing a BGA type semiconductor device. In FIG. 5, elementscorresponding to those shown in FIGS. 3A, 3B and 3C are given the samereference numbers, and explanation will be omitted.

[0066] In the magazine of this fourth embodiment, generally designatedby the reference number 12C, a pair of inclined side plates 4 (inclinedwall) extend from opposite side ends of a bottom plate 6 in such aninclined upward direction so that a spacing between the pair of inclinedside plates 4 increases toward an upward direction, and an upper plate 7(horizontal wall) is formed to have their opposite ends coupled to anupper end of the pair of inclined side plates 4, respectively. Thus, ahousing 9C is constituted. In the other points, the fourth embodiment isthe same as the third embodiment. For example, the semiconductor device10 of the full-wafer-encapsulated and cut-off type can be stored in themagazine 12C of this embodiment, as shown in FIG. 5. However, thesemiconductor device of the small individual mold type can be alsostored in the magazine 12C of this embodiment.

[0067] This embodiment can be said to be featured in that the kind ofsemiconductor device that can be stored in the magazine is limited toonly one kind of the two kinds of semiconductor device 10 and 10 a whichcan be stored in the magazine 12B of the third embodiment and in thatthe one kind of semiconductor device can be stored in the magazine inonly one storing mode. Accordingly, an internal volume of thisembodiment can be made smaller than that of the first to thirdembodiments, with the result that the magazine can be reduced in size,and therefore, the material cost can be correspondingly reduced.

[0068] In the semiconductor device magazine in accordance with thepresent invention, the kind of semiconductor device (of thefull-wafer-encapsulated and cut-off type and the small individual moldtype) that can be stored in the magazine is in no way limited to onlythe BGA semiconductor device, but any kind of semiconductor devicehaving connection terminals formed on a lower surface of thesemiconductor device can be stored in the semiconductor device magazinein accordance with the present invention. For example, the PGAsemiconductor device and the LGA semiconductor device can be stored inthe semiconductor device magazine in accordance with the presentinvention.

[0069] As mentioned above in detail, the semiconductor device magazinein accordance with the present invention comprises a housing having atleast a pair of inclined walls which are located to support thesemiconductor device having the connection terminals formed on a lowersurface of the semiconductor device interposed between the pair ofinclined walls by the fact that opposite edges of the lower surface ofthe semiconductor device are abutted against the pair of inclined wallsand in a condition that the connection terminals 1 are in no contactwith any internal wall of the housing. Therefore, the semiconductordevice can be stored in the semiconductor device magazine in accordancewith the present invention with no damage to the connection terminals ofthe semiconductor device.

[0070] In addition, even if the semiconductor device magazine inaccordance with the present invention is deformed at some degree, sincethe semiconductor device is supported by the pair of inclined wallsdifferently from the prior art semiconductor device magazine in whicheach of a pair of opposite edges of the semiconductor device issupported between one pair of guiding rails, there is no possibilitythat the connection terminals are stained or damaged because ofvibration in the course of a transport and/or a falling from the guidingrail.

[0071] Furthermore, the semiconductor device magazine in accordance withthe present invention is very simple in construction in comparison withthe prior art semiconductor device magazine having the pair of guidingrails for supporting the edge of the semiconductor device, the cost forfabricating the magazine can be greatly reduced.

[0072] The invention has thus been shown and described with reference tothe specific embodiments. However, it should be noted that the presentinvention is in no way limited to the details of the illustratedstructures but changes and modifications may be made within the scope ofthe appended claims.

1. A semiconductor device magazine for storing therein a semiconductordevice having connection terminals formed on a lower surface of thesemiconductor device, the semiconductor device magazine comprising ahousing for storing said semiconductor device therein, said housinghaving at least one pair of inclined walls located to support saidsemiconductor device interposed between said one pair of inclined wallsby the fact that opposite edges of said lower surface of saidsemiconductor device are abutted against the pair of inclined walls, andin such a condition that said connection terminals are in no contactwith any internal wall surface of said housing.
 2. A semiconductordevice magazine claimed in claim 1 wherein said housing further includesa pair of vertical walls extending vertically upward from an upper endof said one pair of inclined walls, respectively, said pair of verticalwalls being separated from each other by such a distance ensuring thatwhen one end of said semiconductor device becomes in contact with one ofsaid pair of vertical walls, said connection terminals are in no contactwith any internal wall surface of said housing.
 3. A semiconductordevice magazine claimed in claim 2 wherein said housing further includesa first horizontal wall coupling between a lower end of said one pair ofinclined walls and a second horizontal wall coupling between an upperend of said pair of vertical walls, said first horizontal wall beingseparated from said second horizontal wall by such a distance ensuringthat when said semiconductor device becomes in contact with said firsthorizontal wall, said connection terminals are in no contact with anyinternal wall surface of said housing.
 4. A semiconductor devicemagazine claimed in claim 1 wherein said housing includes a second pairof inclined walls which are respectively located at positionscorresponding to opposite ends of said semiconductor device stored insaid housing and which are respectively inclined in directions oppositeto respective inclined directions of said one pair of inclined walls. 5.A semiconductor device magazine claimed in claim 4 wherein at therespective positions corresponding to the opposite ends of saidsemiconductor device stored in said housing, said second pair ofinclined walls are coupled directly to said one pair of inclined walls,respectively.
 6. A semiconductor device magazine claimed in claim 4wherein at the respective positions corresponding to the opposite endsof said semiconductor device stored in said housing, said second pair ofinclined walls are coupled to said one pair of inclined walls by a pairof vertical walls, respectively.
 7. A semiconductor device magazineclaimed in claim 4 wherein said housing further includes a firsthorizontal wall coupling between a lower end of said one pair ofinclined walls and a second horizontal wall coupling between an upperend of said second pair of inclined walls.
 8. A semiconductor devicemagazine claimed in claim 5 wherein said housing further includes afirst horizontal wall coupling between a lower end of said one pair ofinclined walls and a second horizontal wall coupling between an upperend of said second pair of inclined walls.
 9. A semiconductor devicemagazine claimed in claim 6 wherein said housing further includes afirst horizontal wall coupling between a lower end of said one pair ofinclined walls and a second horizontal wall coupling between an upperend of said second pair of inclined walls.
 10. A semiconductor devicemagazine claimed in claim 1 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 11. A semiconductor devicemagazine claimed in claim 2 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 12. A semiconductor devicemagazine claimed in claim 3 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 13. A semiconductor devicemagazine claimed in claim 4 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 14. A semiconductor devicemagazine claimed in claim 5 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 15. A semiconductor devicemagazine claimed in claim 6 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 16. A semiconductor devicemagazine claimed in claim 7 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 17. A semiconductor devicemagazine claimed in claim 8 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 18. A semiconductor devicemagazine claimed in claim 9 wherein each of said inclined walls has aninclined angle of not less than 45 degrees.
 19. A semiconductor devicemagazine claimed in claim 2 wherein said housing is formed of polystreneor polyvinyl chloride.
 20. A semiconductor device magazine claimed inclaim 4 wherein said housing is formed of polystrene or polyvinylchloride.